A 7-eV bandgap semiconductor based on silicon-doped α-(Al x Ga 1− x ) 2 O 3
Suboxide molecular-beam epitaxy was used to grow semiconductor films with bandgaps exceeding 7.0 eV for high-performance electronic devices.
Suboxide molecular-beam epitaxy was used to grow semiconductor films with bandgaps exceeding 7.0 eV for high-performance electronic devices.